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Stanford Nanofabrication Facility - Shared infrastructure for nanoscience and engineering research
| Abstract: |
Since one of the key words for nanoscience and engineering research became “cross-disciplinary collaboration among multiple disciplinarians”, role and capability of Stanford Nanofabrication Facility, SNF, has elevated significantly on these days, and indeed SNF is significantly contributing to research in broadly defined “nano” space.
This talk will cover what is SNF, how it works, what are the hot topics going on here, and where we are heading toward in a bigger picture of nanoscience and engineering on Stanford Campus.
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| Speaker: |
Yoshio Nishi - Stanford University |
| Speaker Bio: |
 Director of Stanford Nanofabrication Facility
Director of Research, Center for Integrated Systems
Professor, Department of Electrical Engineering
Stanford University
Yoshio Nishi received BS in materials science and engineering from Waseda University, and PhD in electronics engineering from University of Tokyo (thesis doctor). He joined Toshiba Corporation, working in the area of semiconductor materials and processes during which he discovered ESR PB Center at Si-SiO2 interface which is now accepted as the origin of the fast interface states. He is one of the pioneers in MNOS nonvolatile memory resulting in 256 and 1024 bit MNOS RAM productized in early 70’s. He led the group of silicon on sapphire (SOS) based device research in R&D Center, and developed technology for 16bit SOS microprocessor for medical computer for high speed image data processing. Later he managed the group of memory technology R&D in Semiconductor Device Engineering Laboratory which developed the world first 1Mbit CMOS DRAM, and 256Kbit SRAM and EPROM. In 1986 he joined Hewlett-Packard as Director of Silicon Process Lab, and then became Center Director for ICBD R&D Center running HP’s high performance CMOS technology R&D for PA RISC chips. He established ULSI Research Laboratory as the advanced IC technology research for HP.
In 1996 he joined Texas Instruments Inc, as Senior Vice President and Director of R&D in which he established new R&D model and Kilby Center for TI’s IC technology R&D.
In 2002 he joined Stanford University as Professor of Electrical Engineering, and also Director of Stanford Nanofabrication Facility, and lately Research Director of Center for Integrated Systems. His research interest at Stanford is quantum confined high mobility channel, metal gate work function engineering, resistance change nonvolatile memory device and 3D devices. Professor Nishi published more than 220 papers/conference talks, 12l books co-authored/edited, and held more than 50 patents in US and Japan. He is a Fellow of IEEE and the recipient of IEEE Jack Morton Award (1995), IEEE Robert Noyce Medal (2002) and PICMET Leadership in Technology Management Award (2007).
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| Poster Link: |
Poster |
| Presentation: |
Presentation on 6/11/2008 (PDF)
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