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Magnet Photo

Developments of SOI Monolithic Pixel Detectors

Abstract: We are developing monolithic pixel detectors in a 0.15 and 0.2 um CMOS, fully-depleted silicon-on-insulator (SOI) technology with OKI Semiconductor Co. Ltd. The substrate is Cz high-resistivity silicon, and works as a radiation sensor having p-n junctions. The SOI layer is 40 nm thick Si, where readout electronics is implemented. There is a buried oxide (BOX) layer, 200 nm thick, between these Si layers. There is no mechanical bonding in the SOI pixel detector between sensor and frontend electronics, so fine segmentation and lower mass are expected compared with hybrid detector. These kinds of pixel detectors are also useful in verious research field, such as high-energy physics, X-ray material analysis, astro physics and medical sciences. We have already done several Multi Project Wafer (MPW) runs by gathering many pixel designs into a photo mask set. In this talk, our activities using the SOI process, test results, potential issues and future plans will be presented.
Speaker: Toshinobu Miyoshi - Institute of Particle and Nuclear Studies, KEK
Speaker Bio: Toshinobu Miyoshi received PhD from Tohoku University in Japan for his work on hypernuclear spectroscopic study in 2003. He continued to work on hypernuclear spectroscopy at Jefferson Lab as a post-doc for three years. Since 2006, he has been working at KEK as a post-doc and then later as associate researcher on detector development for protein crystallography and SOI monolithic detector.
Poster Link: Poster